Mosfet & IGBT
Unlock the power of efficient and reliable power management with our Mosfet and IGBT components. From high-speed switching Mosfets to high-power IGBT modules, we offer a comprehensive range of solutions for power electronics applications. Whether you’re designing motor drives, power supplies, or renewable energy systems, our Mosfet and IGBT components deliver superior performance and efficiency, enabling you to maximize power conversion and minimize energy loss in your designs.
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Products
Types of MOFSETS & IGBT
MOSFETs:
Enhancement-Mode MOSFET: MOSFET where a voltage must be applied to the gate terminal to create a conducting channel between the source and drain terminals.
Depletion-Mode MOSFET: MOSFET where a conducting channel exists between the source and drain terminals by default, and applying a voltage to the gate terminal reduces the channel conductivity.
N-Channel MOSFET: MOSFET where the conducting channel is made of n-type semiconductor material, commonly used in high-speed switching applications.
P-Channel MOSFET: MOSFET where the conducting channel is made of p-type semiconductor material, commonly used in low-side switching and complementary configurations.
Power MOSFET: MOSFET optimized for high-power applications, featuring low on-resistance and high current-handling capability.
Logic-Level MOSFET: MOSFET designed to operate with logic-level gate voltages (typically 5V or lower), suitable for interfacing with microcontrollers and digital logic circuits.
Small-Signal MOSFET: MOSFET optimized for low-power and high-frequency applications, commonly used in amplifiers, oscillators, and signal processing circuits.
High-Voltage MOSFET: MOSFET designed to withstand high voltage levels, suitable for power supplies, motor drives, and high-voltage switching applications.
RF MOSFET: MOSFET optimized for radio frequency (RF) applications, featuring low capacitance and high-frequency performance, commonly used in RF amplifiers and transmitters.
HexFET: Trademarked term by International Rectifier (now part of Infineon Technologies) for MOSFETs optimized for high-power applications with reduced switching losses.
IGBTs:
N-Channel IGBT: IGBT where the conducting channel is made of n-type semiconductor material, commonly used in high-power applications such as motor drives and power converters.
P-Channel IGBT: IGBT where the conducting channel is made of p-type semiconductor material, less commonly used compared to N-channel IGBTs.
Planar IGBT: IGBT with a planar structure, offering lower switching losses and higher switching frequencies compared to conventional IGBT designs.
Trench IGBT: IGBT with a trench gate structure, offering improved performance in terms of on-state voltage drop and switching losses.
Reverse Conducting IGBT (RC-IGBT): IGBT with an integrated diode for current flow in the reverse direction, commonly used in applications requiring bidirectional current flow such as motor drives and inverters.
Fast IGBT: IGBT optimized for high-speed switching applications, featuring reduced switching times and lower losses, suitable for power electronics and motor control applications.
Module IGBT: IGBT packaged in a module format with integrated drivers, protection features, and thermal management, offering easy integration into power electronic systems.
High-Voltage IGBT: IGBT designed to withstand high voltage levels, suitable for high-power applications such as industrial drives, renewable energy systems, and traction drives.
Gate-Drive IGBT: IGBT with enhanced gate drive characteristics for improved switching performance and reliability, commonly used in high-frequency switching converters and inverters.
Advanced IGBT: IGBT with advanced features such as soft switching, active clamping, and integrated current sensing, offering improved efficiency and reliability in demanding applications.
Manufacturers
- Infineon Technologies AG
- ON Semiconductor Corporation
- Vishay Intertechnology, Inc.
- Toshiba Electronic Devices & Storage Corporation
- STMicroelectronics N.V.
- NXP Semiconductors N.V.
- Fairchild Semiconductor (now part of ON Semiconductor)
- Rohm Semiconductor
- Renesas Electronics Corporation
- Microchip Technology Inc.
- Siliconix (a subsidiary of Vishay Intertechnology)
- Alpha & Omega Semiconductor, Ltd.
- Diodes Incorporated
- Nexperia B.V.
- Power Integrations, Inc.
- Fuji Electric Co., Ltd.
- International Rectifier (now part of Infineon Technologies)
- IXYS Corporation (now part of Littelfuse, Inc.)
- Alpha Industries (now part of Skyworks Solutions, Inc.)
- SEMIKRON International GmbH
- Mitsubishi Electric Corporation
- Infineon Technologies AG
- Fuji Electric Co., Ltd.
- Toshiba Electronic Devices & Storage Corporation
- ON Semiconductor Corporation
- STMicroelectronics N.V.
- Vishay Intertechnology, Inc.
- Renesas Electronics Corporation
- ABB Ltd.
- IXYS Corporation (now part of Littelfuse, Inc.)
- ROHM Semiconductor
- Powerex Inc. (a joint venture of Mitsubishi Electric and General Electric)
- SEMIKRON International GmbH
- Fairchild Semiconductor (now part of ON Semiconductor)
- Texas Instruments Incorporated
- Hitachi Power Semiconductor Device, Ltd.
- Mitsubishi Electric Europe B.V.
- Microsemi Corporation (now part of Microchip Technology Inc.)
- Dynex Semiconductor (a subsidiary of Zhuzhou CRRC Times Electric Co., Ltd.)
- GeneSiC Semiconductor Inc.
FAQs on MOSFET & IGBT
We provide a range of MOSFETs and IGBTs including N-channel, P-channel, single, and dual types, suitable for various power and switching applications.
Consider factors such as voltage rating, current capacity, switching speed, and thermal performance. Our datasheets and filters can help you find the right product.
Yes, our technical support team is available to help with circuit design, component selection, and performance optimization.
Yes, many of our MOSFETs and IGBTs are RoHS compliant. Check the product specifications for compliance details.
These components are commonly used in power supplies, motor drives, inverters, and various switching applications.